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IMS2016 OMMIC NEWSLETTER......... JUNE FOLLOWUP
INTERNATIONAL MICROWAVE SYMPOSIUM
INTERNATIONAL MICROWAVE SYMPOSIUM IMS 2016 IN SAN FRANCISCO
CLICK ON IMAGE FOR SHORT FORM CATALOG IN PDF

IT'S HARD TO BELIEVE IT'S BEEN 

ALMOST A MONTH SINCE YOU VISITED OMMIC AT IMS-MTT 2016 IN

SAN FRANCISCO.

JUST A FEW WORDS ABOUT OMMIC:

OMMIC is a European manufacturer of microwave and millimeter wave MMICs using III-V compound semiconductor materials GaAs (Gallium Arsenide), GaN (Gallium Nitride) and InP (Indium Phosphide).  

Existing Epitaxial Processes

GaAs MESFET (metal-semiconductor field effect transistor) and GaAs HFET (heterostructure FET)
GaAs pHEMT (pseudomorphic high electron mobility transistor) and InP pHEMT
GaAs mHEMT (metamorphic high electron mobility transistor)
GaAs/GaInP HBT (heterojunction bipolar transistor)
InP/GaAsSb HBT and DHBT (double heterojunction bipolar transistor

These processes are also offered as foundry service.

Back-end options include microwave packages and space qualified via hole process, Au bumps and AuSn (Gold-Tin) bumps

Target markets are telecom (radio base stations and radio links), aerospace, defence and RF test equipment. The products are ITAR-free.

Microwave and Millimeter MMIC Product 

Broadband Low Noise Microwave Amplifiers, as die or in QFN packages, 200MHz  to 160GHz, NF <0.5dB up to 7GHz.
Ultra Low Noise Amplfiers, QFN packages, 0.3GHz to 6GHz, noise figure typ. 0.5dB, single ended or balanced
Microwave Power Amplifiers as die, 8GHz to 77GHz, 22dBm to 41dBm output power (Psat), bandwidth 10% to 30%.
Wideband Amplifiers as die, DC to 54GHz, 2dB noise figure, 13dB to 16dB gain.
Transimpedance Amplifiers with differential output, for 2,5Gbit/s and 10Gbit/s, 72dBΩ to 76dBΩ gain.
Digital 6-bit Phase Shifters for 4GHz to 18GHz, 360° phase control, very small phase error.
Digital 6-bit Attenuators, 0.1GHz to 18GHz, small attenuation error <0,4dB.
Wideband Mixers, 0.1GHz to 10GHz, passive and active versions.
Radar Corechips (phase shifter + LNA or phase shifter + attenuator + switch) for X-band and C-band radar.

 

AT IMS2016 OMMIC INTRODUCED THESE NEW PRODUCTS:

CLICK IMAGE FOR PRODUCT BRIEF

Ultra Low Noise Ka-band Amplifier CGY2260UH/C1 

The CGY2260UH/C1 has an exceptionally low noise figure of 1.5dB and 24dB of gain over the whole 25-43 GHz frequency band. The on chip matching provides 10 dB of Input Return Loss and Output Return Loss over the frequency range. It can be used in Radar, Telecommunication and instrumentation applications.

1.5 x 2.0 mm DIE SIZE CLICK IMAGE FOR PRODUCT BRIEF

Ultra Low Noise K-band Amplifier CGY2121XUH/C2 18-26GHz

The CGY2121XUH/C2 has an exceptionally low noise figure of 1.2 dB with a very flat 19 dB of gain (+/-0.4dB). The on chip matching provides 12 dB of Input Return Loss and 11 dB of Output Return Loss. Thanks to the DC regulation the gain and noise are very stable with respect to temperature change. It can be used in Radar, Telecommunication and Instrumentation applications.

4.8 x 1.6 mm DIE SIZE CLICK IMAGE FOR PRODUCT BRIEF

 

PHASED ARRAY TWO PORT CORE CHIP 26.5-30.5GHz

The CGY2351UH/C1 is a high performance GaAs MMIC Core Chip operating in Ka-band following the T/R architecture; it is passive and exhibits only 2 RF ports. It includes a 6-bit Phase shifter, and a 5-bit attenuator; It has a phase shift range of 360° with a 5.62° step and attenuation range of 22 dB with 0.4dB step. It operate from 26.5 to 30.5 GHz.

 

FOR MORE INFORMATION CONTACT THE SALES REPRESENTATIVES BELOW:

Company Name

                                            

TOM TERLIZZI

GM SYSTEMS LLC  

27 KIM PLACE   
                  KINGS PARK, NEW YORK 11754   
516-807-9488    CELL

631-269-3820   OFFICE   

terlizzi@gmsystems.com

Website: www.GMSYSTEMS.COM             

 

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